Stress Analysis in Silicon Substrates during Thermal Oxidation.

Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...

Thermal Oxidation Mechanism of Silicon Carbide

Encapsulation of Au Nanoparticles on a Silicon Wafer During Thermal Oxidation

We report the behavior of Au nanoparticles anchored onto a Si(111) substrate and the evolution of the combined structure with annealing and oxidation. Au nanoparticles, formed by annealing a Au film, appear to "float" upon a growing layer of SiO2 during oxidation at high temperature, yet they also tend to become partially encapsulated by the growing silica layers. It is proposed that this occur...

Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction

A detailed description of the application of the convergent beam electron diffraction sCBEDd technique for studying strain propagation in the Si1−xGex /Si blanket wafers as well as silicon-based metal–oxide–semiconductor field-effect transistors is presented. Specifically, a simple and robust experimental procedure and analysis for silicon lattice strain measurement using the CBED technique is ...

Thermal stress in silica-on-silicon disk resonators

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